MP4104(MBS-H)

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MP4104(MBS-H) - Toshiba
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Краткое описание: NPN Darlington Transistor, 100V, 4A, 4W, 10-Pin SIP
Производитель Toshiba
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Darlington transistor featuring a 100V collector-emitter voltage and 4A continuous DC collector current. This quad-configuration transistor offers 4000mW maximum power dissipation and a high DC current gain of 1000 at 3A/2V or 2000 at 1.5A/2V. Encased in a 10-pin SIP plastic package with through-hole mounting, it operates within a -55°C to 150°C temperature range.
PCB 10
ECCN EAR99
PPAP No
Type NPN
HTS Code 8541290075
Mounting Through Hole
Cage Code S0562
Pin Count 10
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case SIP
AEC Qualified No
Configuration Quad
Package Material Plastic
Basic Package Type Through Hole
Package Weight (g) 2.1
Package Width (mm) 4
Package Description Single In Line Package
Package Family Name SIP
Package Height (mm) 9
Package Length (mm) 25.2
Radiation Hardening No
Minimum DC Current Gain 1000@3A@2V|[email protected]@2V
Seated Plane Height (mm) 11.3
Max Operating Temperature 150°C
Maximum Power Dissipation 4000mW
Min Operating Temperature -55°C
Number of Elements per Chip 4
Maximum Emitter Base Voltage 6V
Maximum Collector Base Voltage 120V
Maximum Collector-Emitter Voltage 100V
Maximum Base Emitter Saturation Voltage 2@[email protected]V
Maximum Continuous DC Collector Current 4A
Maximum Collector-Emitter Saturation Voltage 1.5@[email protected]V

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