MRF6S21050LSR3
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Краткое описание:
RF FET Transistor, 2.16GHz, 68V, 11.5W, N-CH, SM
Дополнительная информация
Surface mount N-CHANNEL RF Power Field-Effect Transistor operating up to 2.16GHz with a maximum output power of 11.5W. Features a 68V drain-to-source breakdown voltage and 16dB gain. This component offers a maximum power dissipation of 151W and operates within a temperature range of -65°C to 225°C. Halogen-free, lead-free, and RoHS compliant.
| Gain | 16dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 0.088901oz |
| Polarity | N-CHANNEL |
| Frequency | 2.16GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Output Power | 11.5W |
| Test Voltage | 28V |
| Max Frequency | 2.17GHz |
| Min Frequency | 2.11GHz |
| Current Rating | 450mA |
| RoHS Compliant | Yes |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Max Output Power | 11.5W |
| Package Quantity | 250 |
| Power Dissipation | 151W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 151W |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Voltage (Vdss) | 68V |
| Drain to Source Breakdown Voltage | 68V |
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