MRF6S23100HSR3
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Краткое описание:
RF Power FET, 2.4GHz, 20W, 68V, N-CH, SM
Дополнительная информация
Surface mount N-channel RF power field-effect transistor designed for high-frequency applications. Features a 68V drain-to-source breakdown voltage and a maximum output power of 20W at 2.4GHz. Operates with a 12V gate-to-source voltage and offers a typical gain of 15.4dB. This component boasts a wide operating temperature range from -65°C to 225°C and a high power dissipation capability of 330W. Packaged in tape and reel, it is halogen and lead-free.
| Gain | 15.4dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 0.16801oz |
| Polarity | N-CHANNEL |
| Frequency | 2.4GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Output Power | 20W |
| Test Voltage | 28V |
| Max Frequency | 2.4GHz |
| Min Frequency | 2.3GHz |
| Current Rating | 1A |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Max Output Power | 20W |
| Package Quantity | 250 |
| Power Dissipation | 330W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 330W |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Voltage (Vdss) | 68V |
| Drain to Source Breakdown Voltage | 68V |
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