MRF6S27085HSR3
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Краткое описание:
RF Power FET, 2.7GHz, 20W, 68V, N-CH, SM
Дополнительная информация
N-channel RF power FET designed for high-frequency applications. Features a 68V drain-to-source breakdown voltage and a 20W output power capability. Operates efficiently at frequencies up to 2.7GHz with a typical gain of 15.5dB. This surface mount component offers a wide operating temperature range from -65°C to 225°C and a maximum power dissipation of 350W. Halogen and lead-free construction.
| Gain | 15.5dB |
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Weight | 0.16801oz |
| Polarity | N-CHANNEL |
| Frequency | 2.66GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Output Power | 20W |
| Test Voltage | 28V |
| Max Frequency | 2.7GHz |
| Min Frequency | 2.6GHz |
| Current Rating | 900mA |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Max Output Power | 20W |
| Package Quantity | 250 |
| Power Dissipation | 350W |
| Number of Elements | 1 |
| Max Power Dissipation | 350W |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Voltage (Vdss) | 68V |
| Drain to Source Breakdown Voltage | 68V |
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