MSD42WT1G

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MSD42WT1G - Onsemi
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Краткое описание: 300V NPN BJT Transistor, 150mA, SC-70, 3000/Reel
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

High voltage NPN bipolar junction transistor (BJT) in a 3-lead SC-70 (SOT-323) package, supplied on a 3000-piece tape and reel. Features a 300V collector-emitter breakdown voltage (VCEO) and a 300V collector-base voltage (VCBO). Offers a maximum collector current of 150mA and a minimum DC current gain (hFE) of 25. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 450mW. This RoHS compliant and halogen-free component is designed for high-voltage applications.
RoHS Compliant
hFE Min 25
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SC
Current Rating 150mA
RoHS Compliant Yes
DC Rated Voltage 300V
Package Quantity 3000
Power Dissipation 450mW
Number of Elements 1
Radiation Hardening No
Max Breakdown Voltage 300V
Max Collector Current 150mA
Max Power Dissipation 150mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 300V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 300V
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 500mV

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