MT3S111
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Краткое описание:
RF NPN BJT Transistor, 6V, 0.1A, 11.5GHz, S-MINI, 3-Pin
Дополнительная информация
NPN RF transistor featuring SiGe material, single element configuration, and a 3-pin S-Mini surface-mount package with gull-wing leads. Maximum collector-emitter voltage is 6V, with a maximum DC collector current of 0.1A. Key specifications include a minimum DC current gain of 200 at 50mA/5V, a maximum transition frequency of 11500 MHz, and a maximum noise figure of 1.2 dB. The plastic S-Mini package measures 2.9mm x 1.5mm x 1.1mm.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Yes |
| Material | SiGe |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Package/Case | S-Mini |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Weight (g) | 0.012 |
| Package Width (mm) | 1.5 |
| Package Family Name | S-MINI |
| Package Height (mm) | 1.1 |
| Package Length (mm) | 2.9 |
| Maximum Noise Figure | 1.2dB |
| Minimum DC Current Gain | 200@50mA@5V |
| Seated Plane Height (mm) | 1.15 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 160mW |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 5V/30mA |
| Maximum DC Collector Current | 0.1A |
| Maximum Emitter Base Voltage | 0.6V |
| Maximum Transition Frequency | 11500(Typ)MHz |
| Minimum DC Current Gain Range | 200 to 300 |
| Maximum 3rd Order Intercept Point | 32(Typ)dBm |
| Maximum Collector-Emitter Voltage | 6V |
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