MT3S111(TE85L,F)
Производится
Краткое описание:
RF NPN BJT Transistor, 6V, 0.1A, 1.15GHz, S-Mini SMT
Дополнительная информация
NPN RF BJT transistor for surface mount applications. Features a 6V collector-emitter voltage, 0.1A DC collector current, and 160mW power dissipation. Utilizes SiGe material with a minimum DC current gain of 200 at 50mA/5V. Achieves a maximum transition frequency of 11.5GHz and a maximum noise figure of 1.2dB. Packaged in a 3-pin S-Mini lead-frame SMT with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Yes |
| Material | SiGe |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Package/Case | S-Mini |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Weight (g) | 0.012 |
| Package Width (mm) | 1.5 |
| Package Family Name | S-MINI |
| Package Height (mm) | 1.1 |
| Package Length (mm) | 2.9 |
| Maximum Noise Figure | 1.2dB |
| Minimum DC Current Gain | 200@50mA@5V |
| Seated Plane Height (mm) | 1.15 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 160mW |
| Min Operating Temperature | -55°C |
| Typical Output Capacitance | 1.45pF |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 5V/30mA |
| Maximum DC Collector Current | 0.1A |
| Maximum Emitter Base Voltage | 0.6V |
| Maximum Transition Frequency | 11500(Typ)MHz |
| Minimum DC Current Gain Range | 200 to 300 |
| Maximum 3rd Order Intercept Point | 32(Typ)dBm |
| Maximum Collector-Emitter Voltage | 6V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
