MTD8000N4-T
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Краткое описание:
30V 50mA TO-18-3 Through Hole Phototransistor
Дополнительная информация
The MTD8000N4-T phototransistor features a collector emitter breakdown voltage of 30V and a maximum collector current of 50mA. It is packaged in a TO-18-3 case and is designed for through hole mounting. The device operates over a temperature range of -30°C to 100°C and has a maximum power dissipation of 150mW. The MTD8000N4-T is RoHS compliant and suitable for use in a variety of applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Packaging | Bulk |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | TO-18-3 |
| Viewing Angle | 24° |
| RoHS Compliant | Yes |
| Max Collector Current | 50mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -30°C |
| Collector Emitter Breakdown Voltage | 30V |
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