MTM684100LBF
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Краткое описание:
P-Channel JFET, -4.8A ID, -12V Vdss, 42mR Rds(on), SMD
Дополнительная информация
P-channel silicon JFET with a continuous drain current of -4.8A and a drain-to-source breakdown voltage of -12V. Features a low on-resistance of 42mΩ and a maximum power dissipation of 1W. Operates across a wide temperature range from -55°C to 150°C. Packaged in an 8-pin WMINI8-F1 (SC-115) surface-mount device, supplied on tape and reel. Compliant with RoHS and REACH SVHC standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.4mm |
| Height | 0.83mm |
| Length | 2.9mm |
| Polarity | P-CHANNEL |
| Fall Time | 85ns |
| Packaging | Tape and Reel |
| Rds On Max | 42mR |
| Nominal Vgs | -650mV |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.2nF |
| Power Dissipation | 1W |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 235ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 42mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | -4.8A |
| Drain to Source Voltage (Vdss) | -12V |
| Drain to Source Breakdown Voltage | -12V |
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