MTM761100LBF
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Краткое описание:
P-Channel JFET, -4A ID, -12V Vdss, 42mR Rds(on), SMD
Дополнительная информация
P-channel JFET for small signal applications, featuring a -4A continuous drain current and a -12V drain-source breakdown voltage. This silicon FET offers a low drain-source on-resistance of 42mR (max) and operates within a -55°C to 150°C temperature range. Packaged in a compact 2mm x 1.7mm x 0.7mm SMD/SMT WSMINI6-F1-B (SC-113DA) 6-pin package, it supports surface mounting and is HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 0.7mm |
| Length | 2mm |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 42mR |
| Nominal Vgs | -650mV |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.2nF |
| Power Dissipation | 700mW |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 55mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | -4A |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 42mR |
| Drain to Source Breakdown Voltage | -12V |
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