MTM861270LBF
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Краткое описание:
P-Channel JFET, -2A ID, -20V Vdss, 120mR Rds(on), SMD
Дополнительная информация
P-channel JFET for small signal applications, featuring a -2A continuous drain current and -20V drain-to-source voltage. Offers a low 120mΩ maximum drain-source on-resistance and 170mΩ drain-to-source resistance. Operates within a -55°C to 150°C temperature range with 540mW power dissipation. Packaged in a compact WSSMINI6-F1 (6-pin) SMD/SMT format, this silicon MOSFET is HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 0.53mm |
| Length | 1.6mm |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 120mR |
| Nominal Vgs | -750mV |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 300pF |
| Power Dissipation | 540mW |
| Turn-On Delay Time | 6ns |
| Turn-Off Delay Time | 57ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 540mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 170mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | -2A |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 120mR |
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