MTM862270LBF
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Краткое описание:
N-Channel JFET, 2.2A ID, 20V Vdss, 105mR Rds(on), SMD
Дополнительная информация
N-Channel Silicon JFET for small signal applications. Features a 2.2A continuous drain current and 20V drain-to-source breakdown voltage. Offers a maximum drain-source on-resistance of 105mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 540mW. Packaged in a compact WSSMINI6-F1 (SMD/SMT) 6-pin package, this device is HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 0.53mm |
| Length | 1.6mm |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 105mR |
| Nominal Vgs | 850mV |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 280pF |
| Power Dissipation | 540mW |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 540mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 105mR |
| Drain to Source Breakdown Voltage | 20V |
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