MUN2211T3G

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MUN2211T3G - Onsemi
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Краткое описание: NPN BJT Transistor, 50V, 100mA, SC Package
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Digital Transistor (BRT) in a compact SC package. Features a 50V Collector Emitter Breakdown Voltage and 100mA Continuous Collector Current. Offers a low 250mV Collector Emitter Saturation Voltage and a minimum hFE of 35. Operates across a wide temperature range from -55°C to 150°C. This RoHS compliant component is supplied in a 10000-piece tape and reel.
RoHS Compliant
Width 1.5mm
Height 1.09mm
Length 2.9mm
hFE Min 35
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SC
Current Rating 100mA
RoHS Compliant Yes
DC Rated Voltage 50V
Package Quantity 10000
Power Dissipation 230mW
Radiation Hardening No
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Power Dissipation 230mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 100mA
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV

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