MUN2212T1G

Производится
MUN2212T1G - Onsemi
Увеличить
Краткое описание: NPN BJT Transistor, 50V, 100mA, SC-59, 3000-REEL
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Digital Transistor (BRT) in a compact SC package, featuring a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA. This RoHS and Halogen Free component offers a low 250mV collector-emitter saturation voltage and a minimum hFE of 60. With a maximum power dissipation of 338mW, it operates across a temperature range of -55°C to 150°C. Supplied on a 3000-piece tape and reel, this transistor measures 2.9mm in length, 1.5mm in width, and 1.09mm in height.
RoHS Compliant
Width 1.5mm
Height 1.09mm
Length 2.9mm
hFE Min 60
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SC
Current Rating 100mA
RoHS Compliant Yes
DC Rated Voltage 50V
Package Quantity 3000
Power Dissipation 338mW
Radiation Hardening No
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Power Dissipation 338mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 100mA
Collector-emitter Voltage-Max 250mV
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.