MUN2233T1G

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MUN2233T1G - Onsemi
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Краткое описание: NPN BJT Transistor, 50V, 100mA, SC Package, Tape & Reel
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Digital Transistor (BRT) in SC-59 3-lead package, designed for digital applications. Features a 50V Collector Emitter Breakdown Voltage and a maximum Collector Emitter Voltage (VCEO) of 50V. Offers a continuous collector current of 100mA and a low Collector Emitter Saturation Voltage of 250mV. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 338mW. This RoHS and Halogen Free component is supplied on a 3000-piece tape and reel.
RoHS Compliant
Width 1.5mm
Height 1.09mm
Length 2.9mm
hFE Min 80
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SC
Current Rating 100mA
RoHS Compliant Yes
DC Rated Voltage 50V
Package Quantity 3000
Power Dissipation 338mW
Max Output Current 100mA
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Power Dissipation 230mW
Operating Supply Voltage 50V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 100mA
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV

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