MUN5116DW1T1G
Производится
Увеличить
Краткое описание:
Dual PNP BJT Transistor, 50V, 100mA, SOT-363-6
Дополнительная информация
Dual PNP Bipolar Digital Transistor (BRT) in a compact SOT-363-6 package. Features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of -100mA. Offers a low collector-emitter saturation voltage of 250mV and a minimum hFE of 160. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 250mW. This RoHS and Halogen Free component is supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| Width | 1.25mm |
| Height | 0.9mm |
| Length | 2mm |
| hFE Min | 160 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SOT-363-6 |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Max Output Current | 100mA |
| Radiation Hardening | No |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 250mW |
| Operating Supply Voltage | 50V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | -100mA |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
