MUN5212T1G
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Краткое описание:
NPN BJT 50V 100mA 310mW SC Package
Дополнительная информация
The MUN5212T1G is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. It has a maximum power dissipation of 310mW and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a SC package type and is lead free and halogen free. It is RoHS compliant and has a minimum current gain of 60.
| RoHS | Compliant |
| hFE Min | 60 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SC |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Power Dissipation | 310mW |
| Radiation Hardening | No |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 202mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
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