MUN5214T1G

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MUN5214T1G - Onsemi
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Краткое описание: NPN Digital BJT Transistor 50V 100mA SC-70 Tape & Reel
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN digital bipolar junction transistor (BRT) in an SC package, featuring a 50V collector-emitter breakdown voltage and a continuous collector current of 100mA. This device offers a maximum power dissipation of 202mW and a minimum hFE of 80. It operates within a temperature range of -55°C to 150°C and is RoHS and Halogen Free compliant. Packaged on tape and reel for automated assembly.
RoHS Compliant
hFE Min 80
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SC
Current Rating 100mA
RoHS Compliant Yes
DC Rated Voltage 50V
Package Quantity 3000
Power Dissipation 202mW
Max Output Current 100mA
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 50V
Max Collector Current 100mA
Max Power Dissipation 202mW
Operating Supply Voltage 50V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 100mA
Collector-emitter Voltage-Max 250mV
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V