MUN5312DW1T1G
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Краткое описание:
50V NPN BRT Transistor, 100mA, SOT-363-6, 2-Ch
Дополнительная информация
Complementary Bipolar Digital Transistor (BRT) in a SOT-363-6 package. Features a 50V Collector Emitter Breakdown Voltage and 50V Collector Emitter Voltage (VCEO). Offers a 250mV Collector Emitter Saturation Voltage and 100mA Continuous Collector Current. Minimum hFE is 60, with a maximum power dissipation of 187mW. Operating temperature range is -55°C to 150°C. Packaged on a 3000-piece tape and reel.
| RoHS | Compliant |
| Width | 1.25mm |
| Height | 0.9mm |
| Length | 2mm |
| hFE Min | 60 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363-6 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Number of Channels | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 187mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
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