MVGSF1N03LT1G

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MVGSF1N03LT1G - Onsemi
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Краткое описание: Single JFET 30V 1.6A 420mW SOT-23-3
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

The MVGSF1N03LT1G is a single junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 420mW and a continuous drain current of 1.6A. The device is packaged in a SOT-23-3 package and is lead-free. It has a maximum drain to source voltage of 30V and a maximum gate to source voltage of 20V. The transistor has a fall time of 8ns and a turn-off delay time of 16ns, with a turn-on delay time of 2.5ns.
RoHS Compliant
Width 1.4mm
Height 1.01mm
Length 3.04mm
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 100mR
Package/Case SOT-23-3
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 140pF
Turn-On Delay Time 2.5ns
Radiation Hardening No
Turn-Off Delay Time 16ns
Element Configuration Single
Max Power Dissipation 420mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.6A
Drain to Source Voltage (Vdss) 30V

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