N0201RDK

Не рекомендуется для новых проектов
N0201RDK - Renesas
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Краткое описание: PNP BJT Transistor, 25V, 1A, SOT-23F, Surface Mount
Производитель Renesas
Статус производства Не рекомендуется для новых проектов (NRND)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 3-pin SOT-23F package with flat leads and a 0.95mm pin pitch. Offers a maximum collector-emitter voltage of 25V and a continuous collector current of 1A. Maximum power dissipation is 1000mW. Minimum DC current gain is 200 at 100mA and 1V, with a typical transition frequency of 90MHz. Operating temperature range is -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Type PNP
Category Bipolar Power
HTS Code 8541290075
Material Si
Mounting Surface Mount
Cage Code SAN34
Pin Count 3
Automotive No
Lead Shape Flat
Schedule B 8541290080
Package/Case SOT-23F
AEC Qualified No
Configuration Single
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 2
Package Description Small Outline Transistor
Package Height (mm) 0.88(Max)
Package Length (mm) 2.9
Minimum DC Current Gain 200@100mA@1V
Seated Plane Height (mm) 0.85
Max Operating Temperature 150°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 1A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 90(Typ)MHz
Maximum Collector Base Voltage 30V
Maximum Collector-Emitter Voltage 25V

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