NAND01GR4B2AZB6

NAND01GR4B2AZB6 - Micron
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Краткое описание: 1G-bit Parallel NAND Flash, 1.8V, 64M x 16, 63-Pin TFBGA
Производитель Micron

Дополнительная информация

1G-bit Parallel NAND Flash memory, featuring a 64M x 16 word organization and sectored architecture. This component operates at 1.8V with a maximum access time of 25µs and a maximum operating current of 15mA. Housed in a 63-pin TFBGA package with 0.8mm pitch, it is designed for surface mounting. The operating temperature range is -40°C to 85°C.
PCB 63
ECCN 3A991.b.1.a
PPAP No
Density 1Gbit
EU RoHS No
HTS Code 8542320071
Mounting Surface Mount
Cage Code 6Y440
Pin Count 63
Automotive No
Boot Block No
Lead Shape Ball
Schedule B 8542320070
Timing Type Asynchronous
Architecture Sectored
Package/Case TFBGA
AEC Qualified No
RoHS Versions 2011/65/EU, 2015/863
Interface Type Parallel
Pin Pitch (mm) 0.8
Number of Words 64M
Package Material Plastic
Address Bus Width 27bit
Basic Package Type Ball Grid Array
Block Organization Symmetrical
Package Width (mm) 9.5
Maximum Access Time 25000ns
Package Description Thin Fine Pitch Ball Grid Array
Package Family Name BGA
Package Height (mm) 0.8
Package Length (mm) 12
Radiation Hardening No
Number of Bits per Word 16bit
Seated Plane Height (mm) 1.2(Max)
Max Operating Temperature 85°C
Maximum Operating Current 15mA
Min Operating Temperature -40°C
Typical Operating Supply Voltage 1.8V

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