NAND04GR3B2DN6E

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NAND04GR3B2DN6E - Micron
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Краткое описание: 4Gb Non-Volatile Flash Memory, 1.7V-1.95V, 20mA, TSOP, -40°C-85°C
Производитель Micron
Статус производства Производится (ACTIVE)

Дополнительная информация

The NAND04GR3B2DN6E is a 4Gb non-volatile flash memory device with an access time of 25ns and a maximum access time of 25us. It has a 1-bit address bus width and operates at a supply voltage of 1.8V. The device is packaged in a TSOP package and is designed for surface mount applications. It is RoHS compliant and has a maximum operating temperature of 85°C and a minimum operating temperature of -40°C.
RoHS Compliant
Mount Surface Mount
Density 4Gb
Interface Parallel
Packaging Tray
Word Size 16b
Sync/Async Asynchronous
Access Time 25ns
Memory Size 4Gb
Memory Type Non-Volatile, , FLASH, NAND
Package/Case TSOP
RoHS Compliant Yes
Supply Current 20mA
Access Time-Max 25us
Address Bus Width 1b
Max Supply Voltage 1.95V
Min Supply Voltage 1.7V
Operating Supply Voltage 1.8V
Max Operating Temperature 85°C
Min Operating Temperature -40°C

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