NAND04GW3B2AZA1

NAND04GW3B2AZA1 - Micron
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Краткое описание: 4Gbit Parallel NAND Flash, 3.3V, 512Mx8, 63-Pin VFBGA
Производитель Micron

Дополнительная информация

4G-bit parallel NAND Flash memory, 512M x 8 organization, operating at 3.3V. Features a 63-pin VFBGA package with dimensions of 12mm x 9.5mm x 0.7mm (Max). Offers asynchronous timing with a maximum access time of 25,000 ns and a maximum operating current of 30 mA. Suitable for surface mount applications within a 0°C to 70°C temperature range.
PCB 63
ECCN 3A991.b.1.a
PPAP No
Density 4Gbit
EU RoHS No
HTS Code 8542320071
Mounting Surface Mount
Cage Code 6Y440
Pin Count 63
Automotive No
Boot Block No
Lead Shape Ball
Schedule B 8542320070
Timing Type Asynchronous
Architecture Sectored
Package/Case VFBGA
AEC Qualified No
RoHS Versions 2011/65/EU, 2015/863
Interface Type Parallel
Number of Words 512M
Package Material Plastic
Address Bus Width 30bit
Basic Package Type Ball Grid Array
Block Organization Symmetrical
Package Width (mm) 9.5
Maximum Access Time 25000ns
Package Description Very Thin Fine Pitch Ball Grid Array
Package Family Name BGA
Package Height (mm) 0.7(Max)
Package Length (mm) 12
Radiation Hardening No
Number of Bits per Word 8bit
Seated Plane Height (mm) 1.05(Max)
Max Operating Temperature 70°C
Maximum Operating Current 30mA
Min Operating Temperature 0°C
Typical Operating Supply Voltage 3.3V

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