NAND04GW3B2CZA1E
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Краткое описание:
4G-bit Parallel NAND Flash, 3.3V, 512M x 8, 63-Pin VFBGA
Дополнительная информация
4G-bit parallel NAND Flash memory, featuring a 512M x 8 organization and 3.3V operating voltage. This surface-mount component utilizes a VFBGA package with 63 pins, measuring 12mm x 9.5mm x 0.7mm. It offers a maximum access time of 25µs and a maximum operating current of 30mA, operating within a temperature range of 0°C to 70°C. The memory employs a symmetrical, sectored architecture with an asynchronous timing type.
| PCB | 63 |
| ECCN | 3A991.b.1.a |
| PPAP | No |
| Density | 4Gbit |
| EU RoHS | Yes |
| HTS Code | 8542320071 |
| Mounting | Surface Mount |
| Cage Code | 6Y440 |
| Pin Count | 63 |
| Automotive | No |
| Boot Block | No |
| Lead Shape | Ball |
| Schedule B | 8542320070 |
| Timing Type | Asynchronous |
| Architecture | Sectored |
| Package/Case | VFBGA |
| AEC Qualified | No |
| RoHS Versions | 2011/65/EU |
| Interface Type | Parallel |
| Number of Words | 512M |
| Package Material | Plastic |
| Address Bus Width | 30bit |
| Basic Package Type | Ball Grid Array |
| Block Organization | Symmetrical |
| Package Width (mm) | 9.5 |
| Maximum Access Time | 25000ns |
| Package Description | Very Thin Fine Pitch Ball Grid Array |
| Package Family Name | BGA |
| Package Height (mm) | 0.7(Max) |
| Package Length (mm) | 12 |
| Radiation Hardening | No |
| Number of Bits per Word | 8bit |
| Seated Plane Height (mm) | 1.05(Max) |
| Max Operating Temperature | 70°C |
| Maximum Operating Current | 30mA |
| Min Operating Temperature | 0°C |
| Typical Operating Supply Voltage | 3.3V |
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