NAND04GW4B2CZA6F

NAND04GW4B2CZA6F - Micron
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Краткое описание: 4Gbit NAND Flash, Parallel, 3.3V, 256M x 16, 63-Pin VFBGA
Производитель Micron

Дополнительная информация

4G bit parallel NAND Flash memory with 256M x 16 organization. Features a 3.3V operating voltage and a 63-pin VFBGA package for surface mounting. Offers a maximum access time of 25µs and operates across a temperature range of -40°C to 85°C. This component utilizes a symmetrical, sectored architecture with a 29-bit address bus.
PCB 63
ECCN 3A991.b.1.a
PPAP No
Density 4Gbit
EU RoHS Yes
HTS Code 8542320071
Mounting Surface Mount
Cage Code 6Y440
Pin Count 63
Automotive No
Boot Block No
Lead Shape Ball
Schedule B 8542320070
Timing Type Asynchronous
Architecture Sectored
Package/Case VFBGA
AEC Qualified No
RoHS Versions 2011/65/EU
Interface Type Parallel
Number of Words 256M
Package Material Plastic
Address Bus Width 29bit
Basic Package Type Ball Grid Array
Block Organization Symmetrical
Package Width (mm) 9.5
Maximum Access Time 25000ns
Package Description Very Thin Fine Pitch Ball Grid Array
Package Family Name BGA
Package Height (mm) 0.7(Max)
Package Length (mm) 12
Radiation Hardening No
Number of Bits per Word 16bit
Seated Plane Height (mm) 1.05(Max)
Max Operating Temperature 85°C
Maximum Operating Current 30mA
Min Operating Temperature -40°C
Typical Operating Supply Voltage 3.3V

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