NAND08GR4B2BZA1E

NAND08GR4B2BZA1E - Micron
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Краткое описание: 8G-bit Parallel NAND Flash, 1.8V, 512M x 16, 63-Pin VFBGA
Производитель Micron

Дополнительная информация

8G-bit parallel NAND Flash memory with a 512M x 16 organization. Features a 1.8V operating supply voltage and a 63-pin VFBGA package for surface mounting. Offers a maximum access time of 25µs and operates within a temperature range of 0°C to 70°C. The memory utilizes a symmetrical, sectored architecture.
PCB 63
ECCN 3A991.b.1.a
PPAP No
Density 8Gbit
EU RoHS Yes
HTS Code 8542320071
Mounting Surface Mount
Cage Code 6Y440
Pin Count 63
Automotive No
Boot Block No
Lead Shape Ball
Schedule B 8542320070
Timing Type Asynchronous
Architecture Sectored
Package/Case VFBGA
AEC Qualified No
RoHS Versions 2011/65/EU
Interface Type Parallel
Number of Words 512M
Package Material Plastic
Address Bus Width 30bit
Basic Package Type Ball Grid Array
Block Organization Symmetrical
Package Width (mm) 9.5
Maximum Access Time 25000ns
Package Description Very Thin Fine Pitch Ball Grid Array
Package Family Name BGA
Package Height (mm) 0.7(Max)
Package Length (mm) 12
Radiation Hardening No
Number of Bits per Word 16bit
Seated Plane Height (mm) 1.05(Max)
Max Operating Temperature 70°C
Maximum Operating Current 15mA
Min Operating Temperature 0°C
Typical Operating Supply Voltage 1.8V

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