NDS331N
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N-Channel JFET, 20V, 1.3A, 160mR Rds(on), TO-236-3
Дополнительная информация
N-channel logic-level enhancement mode field-effect transistor designed for surface mounting in a TO-236-3 package. Features a 20V drain-to-source breakdown voltage and a continuous drain current of 1.3A. Offers a low drain-source on-resistance of 160mΩ (max) and a maximum power dissipation of 500mW. Operates within a temperature range of -55°C to 150°C, with a nominal gate-to-source voltage of 700mV. Supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 0.94mm |
| Length | 2.92mm |
| Weight | 0.03g |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 160mR |
| Nominal Vgs | 700mV |
| Package/Case | TO-236-3 |
| Current Rating | 1.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 3000 |
| Input Capacitance | 162pF |
| Power Dissipation | 500mW |
| Threshold Voltage | 700mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 210mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 160mR |
| Drain to Source Breakdown Voltage | 20V |
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