NDS7002A
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N-Channel JFET, 60V, 280mA, 2Ω, SOT-23, Surface Mount
Дополнительная информация
N-Channel Enhancement Mode Field Effect Transistor, surface mountable in SOT-23 package. Features 60V drain-source breakdown voltage, 280mA continuous drain current, and a maximum on-resistance of 2Ω. Operates with a gate-source voltage up to 20V and a nominal threshold voltage of 2.1V. Maximum power dissipation is 300mW, with operating temperatures ranging from -65°C to 150°C. Supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Voltage | 60V |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2R |
| Nominal Vgs | 2.1V |
| Package/Case | SOT-23 |
| Current Rating | 280mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Input Capacitance | 50pF |
| Power Dissipation | 300mW |
| Threshold Voltage | 2.1V |
| Number of Elements | 1 |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 280mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2R |
| Drain to Source Breakdown Voltage | 60V |
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