NDS8425
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Краткое описание:
N-Channel JFET, 20V, 7.4A, 22mΩ, SOIC, Surface Mount
Дополнительная информация
Single N-Channel MOSFET, 20V Drain-Source Breakdown Voltage, 7.4A Continuous Drain Current. Features 22mΩ Rds On (Max 7.2mΩ), 2.5V specified gate threshold, and 150°C maximum operating temperature. This surface mount SOIC package offers 9ns turn-on and 11ns fall times, with 2.3W power dissipation. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.9mm |
| Height | 1.575mm |
| Length | 4.9mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.2mR |
| Package/Case | SOIC |
| Current Rating | 7.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 1 |
| Input Capacitance | 2.855nF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 26ns |
| Element Configuration | Single |
| Max Power Dissipation | 2.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 7.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 20V |
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