NDS8958
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Краткое описание:
30V N/P-Channel MOSFET, 4A, 35mR, SOIC, Surface Mount
Дополнительная информация
N- and P-channel MOSFET for surface-mount applications. Features 30V drain-source breakdown voltage and 35mΩ maximum drain-source on-resistance. Operates with a nominal gate-source voltage of 1.6V and a maximum gate-source voltage of 20V. Continuous drain current is 4A, with a power dissipation of 2W. Packaged in SOIC for tape and reel distribution.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Weight | 0.2304g |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Nominal Vgs | 1.6V |
| Package/Case | SOIC |
| Current Rating | 2.9A |
| Package Quantity | 2500 |
| Input Capacitance | 720pF |
| Power Dissipation | 2W |
| Threshold Voltage | 1.6V |
| On-State Resistance | 50mR |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 35MR |
| Drain to Source Breakdown Voltage | 30V |
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