NDS9407
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60V P-Channel MOSFET, 3A, 150mΩ, SOIC, Tape & Reel
Дополнительная информация
P-Channel MOSFET, single element configuration, designed for surface mount applications. Features a continuous drain current of 3A and a drain-to-source breakdown voltage of -60V. Offers a low on-resistance of 150mΩ at a nominal gate-to-source voltage of -1.6V. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 2.5W. Packaged in a SOIC case on a 2500-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | P-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 150mR |
| Nominal Vgs | -1.6V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | -3.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 2500 |
| Input Capacitance | 732pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -1.6V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | -60V |
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