NDT014
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N-Ch MOSFET, 60V, 2.7A, 200mR, SOT-223, SMD
Дополнительная информация
N-Channel MOSFET, 60V Drain-Source Breakdown Voltage, 2.7A Continuous Drain Current, and 200mΩ Maximum Drain-Source On-Resistance. Features a 3V Threshold Voltage and 10ns Turn-On/Turn-Off Delay Times. Surface mountable in a SOT-223 package, this component offers a 3W Power Dissipation and operates across a -55°C to 175°C temperature range.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.7mm |
| Length | 6.7mm |
| Weight | 0.188g |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 200mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | SOT-223 |
| Current Rating | 2.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 155pF |
| Power Dissipation | 3W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
| Drain to Source Breakdown Voltage | 60V |
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