NDT456P
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Краткое описание:
P-Channel MOSFET, 30V, 7.5A, 26mR, SOT-223, SMD
Дополнительная информация
P-Channel MOSFET, surface mount, SOT-223 package. Features -30V Drain to Source Breakdown Voltage, 7.5A continuous drain current, and 26mR drain-to-source resistance. Operates with a gate-to-source voltage up to 20V and a nominal threshold voltage of 1.5V. Offers a maximum power dissipation of 3W and a wide operating temperature range from -55°C to 150°C. Supplied on a 4000-piece tape and reel, this RoHS compliant component is lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.7mm |
| Height | 1.7mm |
| Length | 6.7mm |
| Weight | 0.2502g |
| Polarity | P-CHANNEL |
| Fall Time | 70ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 30mR |
| Nominal Vgs | 1.5V |
| Termination | SMD/SMT |
| Package/Case | SOT-223 |
| Current Rating | -7.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 2500 |
| Input Capacitance | 1.44nF |
| Power Dissipation | 3W |
| Threshold Voltage | 1.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 26mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | -30V |
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