NE5517DG

Снят с производства
NE5517DG - Onsemi
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Краткое описание: Dual Transconductance Amp, 2MHz GBW, 650uA Out, SOIC
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Dual transconductance amplifier featuring a 2MHz gain bandwidth product and 50V/µs slew rate. This integrated circuit offers two independent amplifiers with a maximum output current of 650µA per channel. Operating from a minimum dual supply voltage of 2V up to 22V, or a single supply from 4V to 44V, it boasts a 26kΩ input resistance and 5µA input bias current. The 16-pin SOIC package is RoHS and Halogen Free compliant.
RoHS Compliant
Width 4mm
Length 10mm
Weight 0.023492oz
Lead Free Lead Free
Packaging Rail/Tube
Slew Rate 50V/µs
Output Type PUSH-PULL
Supply Type Single, Dual
Halogen Free Halogen Free
Package/Case SOIC
Amplifier Type TRANSCONDUCTANCE
Output Current 350A
RoHS Compliant Yes
Input Resistance 26kR
Package Quantity 48
Max Input Voltage 5V
Min Input Voltage -5V
Power Dissipation 1.125W
Input Bias Current 5uA
Max Output Current 650uA
Max Supply Voltage 44V
Min Supply Voltage 4V
Number of Channels 2
Number of Circuits 2
Number of Elements 2
Number of Amplifiers 2
Reach SVHC Compliant No
Max Power Dissipation 1.125W
Gain Bandwidth Product 2MHz
Max Dual Supply Voltage 22V
Min Dual Supply Voltage 2V
Operating Supply Current 2.6mA
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Input Offset Voltage (Vos) 5mV
Output Current per Channel 650uA
Common Mode Rejection Ratio 80dB
Nominal Gain Bandwidth Product 2MHz

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