NID9N05ACLT4G
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Краткое описание:
N-Channel MOSFET, 55V, 9A, 90mR, Logic Level, DPAK
Дополнительная информация
N-Channel Power MOSFET, logic level, clamped with ESD protection. Features 55V drain-source voltage, 9A continuous drain current, and 90mΩ drain-source resistance at a nominal 1.75V gate-source voltage. Packaged in a DPAK (TO-252) surface-mount case, this component offers a maximum power dissipation of 1.74W and operates across a wide temperature range of -55°C to 175°C. RoHS and Halogen Free compliant, supplied on a 2500-piece tape and reel.
| RoHS | Compliant |
| Width | 6.73mm |
| Height | 2.38mm |
| Length | 6.22mm |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 90mR |
| Nominal Vgs | 1.75V |
| Halogen Free | Halogen Free |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 250pF |
| Power Dissipation | 1.74W |
| Threshold Voltage | 1.75V |
| Turn-On Delay Time | 200ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 2500ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.74W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 90mR |
| Gate to Source Voltage (Vgs) | 15V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain to Source Breakdown Voltage | 59V |
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