NJD2873T4G

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NJD2873T4G - Onsemi
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Краткое описание: 50V 2A NPN BJT Transistor, DPAK, 65MHz
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar power transistor in a DPAK surface mount package. Features a 50V collector-emitter breakdown voltage and a 2A continuous collector current rating. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 65MHz. Operates within a temperature range of -65°C to 175°C with a maximum power dissipation of 1.68W. Packaged in tape and reel for 2500 units.
RoHS Compliant
Mount Surface Mount
Width 6.22mm
Height 2.38mm
Length 6.73mm
hFE Min 120
Polarity NPN
Frequency 65MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case DPAK
Max Frequency 10MHz
Current Rating 2A
RoHS Compliant Yes
DC Rated Voltage 50V
Package Quantity 2500
Power Dissipation 1.68W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 65MHz
Max Breakdown Voltage 50V
Max Collector Current 2A
Max Power Dissipation 1.68W
Gain Bandwidth Product 65MHz
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 300mV
Collector Emitter Voltage (VCEO) 50V
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 300mV

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