NJT4030PT1G
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Краткое описание:
PNP BJT 40V 3A 2W SOT-223 Transistor
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 40V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 3A. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 160MHz. Packaged in a SOT-223 surface-mount case with a maximum power dissipation of 2W. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.146inch |
| Height | 0.065inch |
| Length | 0.263inch |
| hFE Min | 200 |
| Polarity | PNP |
| Frequency | 160MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 160MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 160MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 500mV |
