NJVMJD44H11T4G
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Краткое описание:
8A 80V NPN BJT Power Transistor DPAK
Дополнительная информация
NPN Bipolar Junction Power Transistor, DPAK package. Features 80V collector-emitter breakdown voltage, 8A maximum collector current, and 1.75W maximum power dissipation. Operates with a gain bandwidth product of 85MHz and a transition frequency of 85MHz. Includes 60 minimum hFE and 1V collector-emitter saturation voltage. Packaged on a 2500-piece tape and reel, this component is halogen and lead-free, and RoHS compliant.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.38mm |
| Length | 6.73mm |
| hFE Min | 60 |
| Polarity | NPN |
| Frequency | 85MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | DPAK |
| Max Frequency | 20MHz |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Power Dissipation | 1.75W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 85MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 8A |
| Max Power Dissipation | 1.75W |
| Gain Bandwidth Product | 85MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 10V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
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