NJW1302G

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NJW1302G - Onsemi
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Краткое описание: PNP BJT Transistor, 250V, 15A, 200W, TO-3P-3LD
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Power Junction Transistor, 250V Collector-Emitter Voltage (VCEO) and Collector Base Voltage (VCBO), with a maximum collector current of 15A and a power dissipation of 200W. Features a transition frequency of 30MHz, minimum hFE of 75, and a low collector-emitter saturation voltage of 600mV. Packaged in a TO-218-3 case, this RoHS compliant component operates from -65°C to 150°C.
RoHS Compliant
Width 5mm
Height 20.1mm
Length 15.8mm
hFE Min 75
Polarity PNP
Frequency 30MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-218-3
Max Frequency 1MHz
RoHS Compliant Yes
Package Quantity 30
Power Dissipation 200W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 30MHz
Max Breakdown Voltage 250V
Max Collector Current 15A
Max Power Dissipation 200W
Gain Bandwidth Product 30MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 250V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 250V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 600mV

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