NJW3281G

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NJW3281G - Onsemi
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Краткое описание: NPN BJT, 250V, 15A, 200W, 30MHz, TO-218-3
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) designed for power applications. Features a 250V Collector-Emitter Voltage (VCEO) and a maximum collector current of 15A. Offers a power dissipation of 200W and a transition frequency of 30MHz. Packaged in a TO-218-3 with a minimum hFE of 75. RoHS compliant and lead-free.
RoHS Compliant
Width 5mm
Height 20.1mm
Length 15.8mm
hFE Min 75
Polarity NPN
Frequency 30MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-218-3
Max Frequency 1MHz
RoHS Compliant Yes
Package Quantity 30
Power Dissipation 200W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 30MHz
Max Breakdown Voltage 250V
Max Collector Current 15A
Max Power Dissipation 200W
Gain Bandwidth Product 30MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 250V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 250V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 600mV

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