NP110N055PUG-E1-AY
По запросу
Увеличить
Краткое описание:
N-Ch MOSFET 55V 110A 2.8mR TO-263AB Power Switching
Дополнительная информация
N-channel single power MOSFET featuring 55V drain-source breakdown voltage and a maximum continuous drain current of 110A. This device offers a low drain-source on-resistance of 2.8mΩ, enabling efficient switching applications. Housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals, it supports a maximum power dissipation of 288W and operates up to 175°C. The silicon element is integrated within a plastic package, with tin terminal finish, and is RoHS compliant.
| RoHS | Compliant |
| JESD-30 Code | R-PSSO-G2 |
| JEDEC-95 Code | TO-263AB |
| JESD-609 Code | e3 |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Compliant | Yes |
| Case Connection | DRAIN |
| Terminal Finish | Tin |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| Package Body Material | Plastic |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (ID) | 110A |
| Transistor Application | SWITCHING |
| DS Breakdown Voltage-Min | 55V |
| Max Operating Temperature | 175°C |
| Power Dissipation-Max (Abs) | 288W |
| Transistor Element Material | SILICON |
| Drain Current-Max (Abs) (ID) | 110A |
| Drain-source On Resistance-Max | 2.8mR |
| Pulsed Drain Current-Max (IDM) | 440A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
