NP36P06KDG-E1-AY
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P-Channel MOSFET -60V 36A 37.5mR TO-263AB Switching
Дополнительная информация
P-channel single power MOSFET featuring a 60V drain-source breakdown voltage and a maximum continuous drain current of 36A. This device offers a low drain-source on-resistance of 37.5mΩ, a pulsed drain current capability of 108A, and a maximum power dissipation of 56W. Designed for switching applications, it utilizes silicon metal-oxide semiconductor FET technology and is housed in a TO-263AB (R-PSSO-G2) surface-mount package with gull-wing terminals. Operating up to 175°C, it is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| JESD-30 Code | R-PSSO-G2 |
| JEDEC-95 Code | TO-263AB |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Compliant | Yes |
| Case Connection | DRAIN |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| Package Body Material | Plastic |
| Polarity/Channel Type | P-CHANNEL |
| Drain Current-Max (ID) | 36A |
| Transistor Application | SWITCHING |
| DS Breakdown Voltage-Min | 60V |
| Max Operating Temperature | 175°C |
| Power Dissipation-Max (Abs) | 56W |
| Transistor Element Material | SILICON |
| Drain Current-Max (Abs) (ID) | 36A |
| Avalanche Energy Rating (Eas) | 54mJ |
| Drain-source On Resistance-Max | 37.5mR |
| Pulsed Drain Current-Max (IDM) | 108A |
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