NP50P04KDG-E1-AY
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Краткое описание:
P-CH MOSFET 40V 50A 15mR TO-263
Дополнительная информация
P-channel MOSFET with 40V drain-source breakdown voltage and 50A continuous drain current. Features 15mΩ maximum drain-source on-resistance and 150A pulsed drain current. Operates up to 175°C with 90W maximum power dissipation. This surface-mount component utilizes silicon FET technology in a TO-263AB package with gull-wing terminals. Suitable for switching applications.
| RoHS | Compliant |
| JESD-30 Code | R-PSSO-G2 |
| JEDEC-95 Code | TO-263AB |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Compliant | Yes |
| Case Connection | DRAIN |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| Package Body Material | Plastic |
| Polarity/Channel Type | P-CHANNEL |
| Drain Current-Max (ID) | 50A |
| Transistor Application | SWITCHING |
| DS Breakdown Voltage-Min | 40V |
| Max Operating Temperature | 175°C |
| Power Dissipation-Max (Abs) | 90W |
| Transistor Element Material | SILICON |
| Drain Current-Max (Abs) (ID) | 50A |
| Avalanche Energy Rating (Eas) | 136mJ |
| Drain-source On Resistance-Max | 15mR |
| Pulsed Drain Current-Max (IDM) | 150A |
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