NSBC114EPDXV6T1G
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Краткое описание:
50V 100mA Complementary BJT Transistor, SOT-563
Дополнительная информация
Complementary Bipolar Digital Transistor (BRT) in a SOT-563-6 package. Features 50V collector-emitter breakdown voltage and 250mV collector-emitter saturation voltage. Offers a continuous collector current of 100mA and a minimum hFE of 35. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. This RoHS compliant component is supplied on a 4000-piece tape and reel.
| RoHS | Compliant |
| Width | 1.2mm |
| Height | 0.55mm |
| Length | 1.6mm |
| Weight | 0.000289oz |
| hFE Min | 35 |
| Polarity | PNP, NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-563-6 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 4000 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
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