NSBC123EPDXV6T1G
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Краткое описание:
NPN/PNP BJT Transistor, 50V, 100mA, SOT-563-6
Дополнительная информация
The NSBC123EPDXV6T1G is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is available in a SOT-563-6 package and is lead-free. The transistor has a minimum current gain of 8 and a maximum power dissipation of 500mW. It operates over a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Width | 1.2mm |
| Height | 0.55mm |
| Length | 1.6mm |
| Weight | 0.000289oz |
| hFE Min | 8 |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-563-6 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 4000 |
| Number of Channels | 2 |
| Max Collector Current | 100mA |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Continuous Collector Current | 100mA |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Breakdown Voltage | 50V |
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