NSS20200LT1G
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PNP BJT Transistor, -20V, -2A, 100MHz, SOT-23
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package, featuring a low VCE(sat) of -130mV. This device offers a maximum collector current of 2A and a collector-emitter breakdown voltage of 20V. With a transition frequency of 100MHz and a minimum hFE of 250, it is suitable for various switching and amplification applications. The component operates within a temperature range of -55°C to 150°C and is supplied on a 3000-piece tape and reel. RoHS and Halogen Free compliant.
| RoHS | Compliant |
| Width | 1.4mm |
| Height | 1.01mm |
| Length | 3.04mm |
| hFE Min | 250 |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23-3 |
| Max Frequency | 100MHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 540mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 2A |
| Max Power Dissipation | 460mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 180mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | -130mV |
