NSS40200LT1G

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NSS40200LT1G - Onsemi
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Краткое описание: PNP BJT, 40V, 2A, 100MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in SOT-23-3 package. Features a low Collector-Emitter Saturation Voltage of -135mV and a maximum Collector Current of 2A. Offers a Collector-Emitter Breakdown Voltage of 40V and a transition frequency of 100MHz. This RoHS compliant component operates within a temperature range of -55°C to 150°C.
RoHS Compliant
hFE Min 250
Polarity PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 540mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 40V
Max Collector Current 2A
Max Power Dissipation 460mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 170mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage -135mV

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