NSS40200UW6T1G
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PNP BJT Transistor, 40V, 2A, 140MHz, Low VCE(sat), SOT-23
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) featuring low VCE(sat) of -100mV. This discrete semiconductor offers a maximum collector current of 2A and a collector-emitter voltage of 40V. With a transition frequency of 140MHz, it is suitable for high-frequency applications. The component is housed in a compact WDFN6 package, measuring 2 x 2 x 0.75 mm with a 0.65 mm pitch, and is supplied on a 3000-piece tape and reel. It operates within a temperature range of -55°C to 150°C and is RoHS compliant and Halogen Free.
| RoHS | Compliant |
| Series | NSS40200UW6T1G |
| hFE Min | 250 |
| Polarity | PNP |
| Frequency | 140MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 140MHz |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 2A |
| Max Power Dissipation | 875mW |
| Gain Bandwidth Product | 140MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -100mV |
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