NSS40600CF8T1G

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NSS40600CF8T1G - Onsemi
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Краткое описание: 40V 6A PNP Bipolar Junction Transistor, 100MHz, 1.4W, SMD/SMT
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

The NSS40600CF8T1G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 6A. It operates at frequencies up to 100MHz and has a maximum power dissipation of 1.4W. The transistor is packaged in a surface-mount device (SMD/SMT) format and is compliant with RoHS regulations. The operating temperature range is -55°C to 150°C.
RoHS Compliant
Polarity PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SMD/SMT
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 1.4W
Number of Elements 1
Transition Frequency 100MHz
Max Collector Current 6A
Max Power Dissipation 830mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 220mV
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V

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